Sample Preparation
Sample Preparation
Sputter facility 1
Type: Ion beam sputtering
Manufacturer: Self-construction
Targets: 4
Temperature range: 300 - 1000K
Sputter facility 2
Type: Ion beam sputtering
Manufacturer: Self-construction
Targets: 4
Temperature range: 77 – 70
MBE (Molecular Beam Epitaxy System)
Molecular Beam Epitaxy System
Manufacturer: Omicron
Number of evaporators: 4
Temperature range: 300 – 900K
Lab for microstructuring
Wet bench for the microstructuring processes.
(1) Kloé Dilase 250 Laser writer to expose the photoresist.
(2) Spin coater to deposit photoresist on silicon substrate.
(3) Hot plate for soft- and post-exposure-bakes.
(4) Ultra sonic bath to assist the lift-off process.
(5) vacuum furnace.
Focused Ion Beam FIB
Focused Ion Beam / Scanning Electron Microscope Dualbeam (FEI) with Raith Multibeam Lithography attachment.
Atomic Layer Deposition
Plasma Enhanced Atomic Layer Deposition (PE‐ALD) with in‐situ ellipsometer (SENTECH).